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19-1185; Rev 3; 9/08
KIT ATION EVALU E AILABL AV
3.6V, 1W RF Power Transistors for 900MHz Applications
____________________________Features
Low Voltage: Operates from 1 Li-Ion or 3 NiCd/NiMH Batteries DC-to-Microwave Operating Range 1W Output Power at 900MHz On-Chip Diode for Accurate Biasing (MAX2602) Low-Cost Silicon Bipolar Technology Does Not Require Negative Bias or Supply Switch High Efficiency: 58%
General Description
The MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells or one Li-Ion cell. These transistors deliver 1W of RF power from a 3.6V supply with efficiency of 58% when biased for constant-envelope applications (e.g., FM or FSK). For NADC (IS-54) operation, they deliver 29dBm with -28dBc ACPR from a 4.8V supply. The MAX2601 is a high-performance silicon bipolar RF power transistor. The MAX2602 includes a highperformance silicon bipolar RF power transistor, and a biasing diode that matches the thermal and process characteristics of the power transistor. This diode is used to create a bias network that accurately controls the power transistor's collector current as the temperature changes. The MAX2601/MAX2602 can be used as the final stage in a discrete or module power amplifier. Silicon bipolar technology eliminates the need for voltage inverters and sequencing circuitry, as required by GaAsFET power amplifiers. Furthermore, a drain switch is not required to turn off the MAX2601/MAX2602. This increases operating time in two ways: it allows lower system end-of-life battery voltage, and it eliminates the wasted power from a drain-switch device. The MAX2601/MAX2602 are available in thermally enhanced, 8-pin SO packages, which are screened to the extended temperature range (-40C to +85C).
MAX2601/MAX2602
Ordering Information
PART MAX2601ESA MAX2602ESA TEMP RANGE -40C to +85C -40C to +85C PIN-PACKAGE 8 SOIC 8 SOIC
________________________Applications
Narrow-Band PCS (NPCS) 915MHz ISM Transmitters Microcellular GSM (Power Class 5) AMPS Cellular Phones Digital Cellular Phones Two-Way Paging CDPD Modems Land Mobile Radios
C E E B 1 2 3 4 8 7 6 5
Pin Configurations
TOP VIEW
C E E B
C E BIAS B
1 2 3 4
8 7 6 5
C E E B
MAX2601 PSOPII
MAX2602 PSOPII
Typical Application Circuit appears at end of data sheet.
________________________________________________________________ Maxim Integrated Products 1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim's website at www.maxim-ic.com.
3.6V, 1W RF Power Transistors for 900MHz Applications MAX2601/MAX2602
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage, Shorted Base (VCES) ....................17V Emitter Base Reverse Voltage (VEBO)...................................2.3V BIAS Diode Reverse Breakdown Voltage (MAX2602) ..........2.3V Average Collector Current (IC)........................................1200mA Continuous Power Dissipation (TA = +70C) SOIC (derate 80mW/C above +70C) (Note 1) .............6.4W Operating Temperature Range ...........................-40C to +85C Storage Temperature Range .............................-65C to +165C Junction Temperature ......................................................+150C Lead Temperature (soldering, 10s) .................................+300C
Note 1: Backside slug must be properly soldered to ground plane (see Slug Layout Techniques section).
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(TA = TMIN to TMAX, unless otherwise noted.) PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage DC Current Gain Collector Cutoff Current Output Capacitance SYMBOL BVCEO BVCES LVCEO BVCBO hFE ICES COB IC < 100A IC = 200mA IC < 100A, emitter open IC = 250mA, VCE = 3V VCE = 6V, VBE = 0V VCB = 3V, IE = 0mA, f = 1MHz CONDITIONS Open base Shorted base MIN 15 15 5.0 15 100 0.05 9.6 1.5 A pF TYP MAX UNITS V V V
AC ELECTRICAL CHARACTERISTICS
(Test Circuit of Figure 1, VCC = 3.6V, VBB = 0.750V, ZLOAD = ZSOURCE = 50, POUT = 30dBm, f = 836MHz, TA = +25C, unless otherwise noted.) PARAMETER Frequency Range Base Current Harmonics Power Gain Collector Efficiency Stability under Continuous Load Mismatch Conditions Two-Tone IMR Noise Figure VSWR IM3 IM5 NF SYMBOL f IB 2fo, 3fo VCC = 3.6V, POUT = 30dBm VCC = 3.0V, POUT = 29dBm POUT = 30dBm No modulation VCC = 5.5V, all angles (Note 3) POUT = +30dBm total power, f1 = 835MHz, f2 = 836MHz VBB = 0.9V (Note 2) CONDITIONS MIN DC 4.2 -43 -42 11.6 58 8:1 -16 -25 3.3 dBc dB TYP MAX 1 UNITS GHz mA dBc dBc dB %
Note 2: Guaranteed by design. Note 3: Under these conditions: a) no spurious oscillations shall be observed at collector greater than -60dBc; b) no parametric degradation is observable when mismatch is removed; and c) no current draw in excess of the package dissipation capability is observed.
2
_______________________________________________________________________________________
3.6V, 1W RF Power Transistors for 900MHz Applications
__________________________________________Typical Operating Characteristics
(Test Circuit of Figure 1, input/output matching networks optimized for specific measurement frequency, VCC = 3.6V, VBB = 0.750V, POUT = 30dBm, ZLOAD = ZSOURCE = 50, f = 836MHz, TA = +25C, unless otherwise noted.)
TWO-TONE OUTPUT POWER AND IM3 vs. COLLECTOR CURRENT
MAX2601-02 MAX2601-01
MAX2601/MAX2602
COLLECTOR CURRENT
1.0 31
TWO-TONE OUTPUT POWER, IM3, IM5 vs. INPUT POWER
POUT, IM3, AND IM5 ARE RMS COMPOSITE TWO-TONE POWER LEVELS POUT
MAX2601-03
20
0.8
VBB = 1.00V VBB = 0.95V VBB = 0.90V POUT (dBm)
POUT, IM3, AND IM5 ARE RMS COMPOSITE TWO-TONE POWER LEVELS 30
35
POUT
ICC (A)
0.6
POUT, IM3, IM5 (dBm)
19
25
29 IM3 28
18
15
IM3
0.4
17
0.2
5
IM5
VBB = 0.85V VBB = 0.80V 27 6 0.4 0.5 0.6 ICC (A) 0.7 0.8 16 -5 5 10 15 INPUT POWER (dBm) 20 25
0 0 1 2 3 VCE (V) 4 5
TWO-TONE OUTPUT POWER, IM3, IM5 vs. INPUT POWER (f = 433MHz)
MAX2601-04
ACPR vs. OUTPUT POWER (IS-54 /4 DQPSK MODULATION, VBB = 0.85V)
MAX2601-05
COLLECTOR EFFICIENCY vs. OUTPUT POWER (IS-54 /4 DQPSK MODULATION, VBB = 0.85V)
POUT, IM3, AND IM5 ARE RMS COMPOSITE TWO-TONE POWER LEVELS 3.0V
MAX2601-06
35 POUT 25 POUT, IM3, AND IM5 ARE RMS COMPOSITE TWO-TONE POWER LEVELS
-20 -22 -24 3.0V
60 50 EFFICIENCY (%) 40 30 20 4.8V 10 0
POUT, IM3, IM5 (dBm)
-26 ACPR (dBc) IM3 -28 -30 -32 -34 -36 -38 4.8V 4.2V 3.6V
15
3.6V
4.2V
IM5 5
-5 5 10 15 INPUT POWER (dBm) 20 25
-40 10 15 20 25 30 35 OUTPUT POWER (dBm)
10
15
20
25
30
35
OUTPUT POWER (dBm)
______________________________________________________________Pin Description
PIN NAME MAX2601 1, 8 2, 3, 6, 7, Slug MAX2602 1, 8 2, 6, 7, Slug C E Transistor Collector Transistor Emitter Anode of the Biasing Diode that matches the thermal and process characteristics of the power transistor. Requires a high-RF-impedance, lowDC-impedance (e.g., inductor) connection to the transistor base (Pin 4). Current through the biasing diode (into Pin 3) is proportional to 1/15 the collector current in the transistor. Transistor Base 3 FUNCTION
--
3
BIAS
4, 5
4, 5
B
_______________________________________________________________________________________
3.6V, 1W RF Power Transistors for 900MHz Applications MAX2601/MAX2602
VCC VBB 0.1F 1000pF 100nH 24 1 4 RFIN T1 1000pF 5 2pF 12pF 2, 6, 7 BACKSIDE SLUG 8 10pF 1000pF T2 5 1000pF L1 0.1F
2pF
L1 = COILCRAFT A05T INDUCTOR, 18.5nH T1, T2 = 1", 50 TRANSMISSION LINE ON FR-4
Figure 1. Test Circuit
_______________Detailed Description
MAX2601/MAX2602
The MAX2601/MAX2602 are high-performance silicon bipolar transistors in power-enhanced, 8-pin SO packages. The base and collector connections use two pins each to reduce series inductance. The emitter connects to three (MAX2602) or four (MAX2601) pins in addition to a back-side heat slug, which solders directly to the PC board ground to reduce emitter inductance and improve thermal dissipation. The transistors are intended to be used in the common-emitter configuration for maximum power gain and power-added efficiency.
VCC VCC
RBIAS
RFC
RFOUT COUT RFC Q1 CBIAS CIN RFIN Q2
Current Mirror Bias (MAX2602 only)
The MAX2602 includes a high-performance silicon bipolar RF power transistor and a thermally matched biasing diode that matches the power transistor's thermal and process characteristics. This diode is used to create a bias network that accurately controls the power transistor's collector current as the temperature changes (Figure 2). The biasing diode is a scaled version of the power transistor's base-emitter junction, in such a way that the current through the biasing diode is 1/15 the quiescent collector current of the RF power transistor. Supplying the biasing diode with a constant current source and connecting the diode's anode to the RF power transistor's base ensures that the RF power transistor's quiescent collector current remains constant through
4
Figure 2. Bias Diode Application
temperature variations. Simply tying the biasing diode to the supply through a resistor is adequate in most situations. If large supply variations are anticipated, connect the biasing diode to a reference voltage through a resistor, or use a stable current source. Connect the biasing diode to the base of the RF power transistor through a large RF impedance, such as an RF choke (inductor), and decouple to ground through a surfacemount chip capacitor larger than 1000pF.
_______________________________________________________________________________________
3.6V, 1W RF Power Transistors for 900MHz Applications
Applications Information
Optimum Port Impedance
The source and load impedances presented to the MAX2601/MAX2602 have a direct impact upon its gain, output power, and linearity. Proper source- and loadterminating impedances (ZS and ZL) presented to the power transistor base and collector will ensure optimum performance. For a power transistor, simply applying the conjugate of the transistor's input and output impedances calculated from small-signal S-parameters will yield less than optimum device performance. For maximum efficiency at VBB = 0.75V and VCC = 3.6V, the optimum power-transistor source and load impedances (as defined in Figure 3) are: At 836MHz: ZS = 5.5 + j2.0 ZL = 6.5 + j1.5 At 433MHz: ZS = 9.5 - j2.5 ZL = 8.5 - j1.5 ZS and ZL reflect the impedances that should be presented to the transistor's base and collector. The package parasitics are dominated by inductance (as shown in Figure 3), and need to be accounted for when calculating ZS and ZL. The internal bond and package inductances shown in Figure 3 should be included as part of the endapplication matching network, depending upon exact layout topology.
Slug Layout Techniques
The most important connection to make to the MAX2601/MAX2602 is the back side. It should connect directly to the PC board ground plane if it is on the top side, or through numerous plated through-holes if the ground plane is buried. For maximum gain, this connection should have very little self-inductance. Since it is also the thermal path for heat dissipation, it must have low thermal impedance, and the ground plane should be large.
MAX2601/MAX2602
4
3
2
1
2.8nH
MAX2601 MAX2602
2.8nH
2.8nH ZS ZL
2.8nH
5
6
7
8
Figure 3. Optimum Port Impedance
Package Information
For the latest package outline information and land patterns, go to www.maxim-ic.com/packages. PACKAGE TYPE 8 SOIC PACKAGE CODE S8E-12 DOCUMENT NO. 21-0041
_______________________________________________________________________________________
5
3.6V, 1W RF Power Transistors for 900MHz Applications MAX2601/MAX2602
Revision History
REVISION NUMBER 2 3 REVISION DATE 5/97 9/08 -- Removed die version from Ordering Information DESCRIPTION PAGES CHANGED -- 1
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
6 _____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 (c) 2008 Maxim Integrated Products Maxim is a registered trademark of Maxim Integrated Products, Inc.

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